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samfurori

IPD042P03L3G BTS5215LAUMA1 IC Chip Sabon Kayan Lantarki

taƙaitaccen bayanin:


Cikakken Bayani

Tags samfurin

Saukewa: IPD042P03L3
Yanayin Haɓaka Tashar P-Tasirin Filin Tasirin Transistor (FET), -30 V, D-PAK
Iyalan Opti MOS™ na Infineon sun haɗa da MOSFETs na tashar p-tashar.Waɗannan samfuran koyaushe suna saduwa da mafi girman inganci da buƙatun aiki a cikin mahimman ƙayyadaddun ƙayyadaddun ƙirar tsarin wutar lantarki kamar juriya kan-jihar da adadi na halayen cancanta.

Takaitaccen fasali
Yanayin haɓakawa
Matsayin hankali
An ƙididdige kankara
Saurin sauyawa
Dv/dt mai daraja
Pb-free-plating gubar
RoHS mai yarda, Halogen-free
Cancanta bisa ga AEC Q101
Aikace-aikace masu yuwuwa
Ayyukan Gudanar da Wuta
Sarrafa motoci
Caja a kan jirgi
DC-DC
Mabukaci
Masu fassara matakin dabaru
Direbobin ƙofar MOSFET Power
Sauran aikace-aikacen sauya sheka

Ƙayyadaddun bayanai

Siffar Samfur Siffar Darajar
Mai ƙira: Infineon
Rukunin samfur: MOSFET
RoHS:  Cikakkun bayanai
Fasaha: Si
Salon hawa: SMD/SMT
Kunshin / Harka: ZUWA-252-3
Transistor Polarity: P-Channel
Adadin Tashoshi: 1 Tashoshi
Vds - Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ruwa: 30 V
Id - Ci gaba da zubar da ruwa a halin yanzu: 70 A
Rds On - Juriya-Magudanar Ruwa: 3.5 mohms
Vgs – Ƙofar-Source Voltage: - 20V, + 20V
Vgs th – Ƙofar-Source Voltage Voltage: 2 V
Qg - Cajin Ƙofar: 175 nc
Mafi ƙarancin zafin aiki: -55C
Matsakaicin Yanayin Aiki: + 175 C
Pd - Rashin Wutar Lantarki: 150 W
Yanayin Tashoshi: Haɓakawa
Sunan kasuwanci: OptiMOS
Marufi: Karfe
Marufi: Yanke Tef
Marufi: MouseReel
Alamar: Infineon Technologies
Tsari: Single
Lokacin Faɗuwa: 22 ns
Canjin Gabatarwa - Min: 65 S
Tsayi: 2.3 mm
Tsawon: 6.5 mm
Nau'in Samfur: MOSFET
Lokacin Tashi: 167 ns
Jerin: Mafi kyawun P3
Yawan Kunshin Masana'anta: 2500
Rukuni: MOSFETs
Nau'in Transistor: 1 P-Channel
Yawancin Lokacin Jinkiri na Kashewa: 89ns ku
Yawancin Lokacin Jinkiri na Kunnawa: 21 ns
Nisa: 6.22 mm
Sashe # Laƙabi: IPD42P3L3GXT SP000473922 IPD042P03L3GBTMA1
Nauyin Raka'a: 0.011640 oz

 


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