IPD068P03L3G sabon asali Kayan Wutar Lantarki IC guntu MCU BOM sabis a cikin hannun jari IPD068P03L3G
Halayen Samfur
| TYPE | BAYANI |
| Kashi | Samfuran Semiconductor mai hankali |
| Mfr | Infineon Technologies |
| Jerin | OptiMOS™ |
| Kunshin | Tape & Reel (TR) Yanke Tape (CT) Digi-Reel® |
| Matsayin samfur | Mai aiki |
| Nau'in FET | P-Channel |
| Fasaha | MOSFET (Metal Oxide) |
| Matsala zuwa Tushen Voltage (Vdss) | 30 V |
| Na Yanzu - Cigaban Ruwa (Id) @ 25°C | 70A (Tc) |
| Fitar da Wutar Lantarki (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Cajin Ƙofar (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Vgs (Max) | ± 20V |
| Ƙarfin shigarwa (Ciss) (Max) @ Vds | 7720 pF @ 15V |
| Siffar FET | - |
| Rashin Wutar Lantarki (Max) | 100W (Tc) |
| Yanayin Aiki | -55°C ~ 175°C (TJ) |
| Nau'in hawa | Dutsen Surface |
| Kunshin Na'urar Mai bayarwa | Saukewa: PG-TO252-3 |
| Kunshin / Case | TO-252-3, DPak (2 Jagoran + Tab), SC-63 |
| Lambar Samfurin Tushen | Saukewa: IPD068 |
Takardu & Mai jarida
| NAU'IN ARZIKI | MAHADI |
| Takardar bayanai | Saukewa: IPD068P03L3 |
| Wasu Takardu masu alaƙa | Jagoran Lambar Sashe |
| Fitaccen Samfurin | Tsarukan Gudanar da Bayanai |
| HTML Datasheet | Saukewa: IPD068P03L3 |
| Model EDA | IPD068P03L3GATMA1 na Ultra Librarian |
Rarraba Muhalli & Fitarwa
| SANARWA | BAYANI |
| Matsayin RoHS | ROHS3 mai yarda |
| Matsayin Ji daɗin Danshi (MSL) | 1 (Unlimited) |
| Matsayin ISAR | KASANCEWA Ba Ya Shafe |
| ECN | EAR99 |
| HTSUS | 8541.29.0095 |
Ƙarin Albarkatu
| SANARWA | BAYANI |
| Wasu Sunayen | Saukewa: IPD068P03L3GATMA1DKR IPD068P03L3GATMA1-ND Saukewa: SP001127838 Saukewa: IPD068P03L3GATMA1CT Saukewa: IPD068P03L3GATMA1TR |
| Daidaitaccen Kunshin | 2,500 |
transistor
transistor shine ana'urar semiconductoramfani da sufadadakocanzasiginar lantarki daiko.Transistor yana ɗaya daga cikin mahimman tubalan ginin zamanikayan lantarki.[1]Ya kunshisemiconductor abu, yawanci tare da akalla ukutashoshidon haɗi zuwa da'ira na lantarki.Aƙarfin lantarkikohalin yanzushafi guda biyu na tashoshin transistor suna sarrafa na yanzu ta wani tashoshi biyu.Saboda ikon sarrafawa (fitarwa) na iya zama mafi girma fiye da ikon sarrafawa (shigarwa), transistor na iya ƙara sigina.Wasu transistor ana tattara su daban-daban, amma wasu da yawa ana samun su a cikihadedde da'irori.
Austro-Hungary masanin kimiyyar lissafi Julius Edgar Lilienfeldya gabatar da manufar atransistor mai tasirin filina cikin 1926, amma ba zai yiwu a zahiri gina na'urar aiki ba a lokacin.[2]Na'urar aiki ta farko da aka gina ita cetransistor lamba-lambaMasana kimiyyar lissafi na Amurka suka ƙirƙira a cikin 1947John BardeenkumaWalter Brattainyayin aiki a karkashinWilliam ShockleyaBell Labs.Su uku sun raba 1956Nobel Prize a Physicssaboda nasarar da suka samu.[3]Mafi yawan nau'in transistor da ake amfani dashi shinekarfe-oxide-semiconductor filin-tasirin transistor(MOSFET), wanda aka ƙirƙira taMohammed AtallakumaDawon Kahnga Bell Labs a 1959.[4][5][6]Transistors sun kawo sauyi a fannin na'urorin lantarki, kuma sun share hanya don ƙarami da rahusarediyo,kalkuleta, kumakwamfutoci, da sauransu.
Yawancin transistor ana yin su ne daga tsarkakkiyar tsaftasiliki, da wasu dagaJamus, amma ana amfani da wasu kayan semiconductor wasu lokuta.Transistor na iya samun nau'in caja ɗaya kawai, a cikin transistor mai tasiri, ko yana iya samun nau'ikan caja iri biyu a ciki.bipolar junction transistorna'urori.Idan aka kwatanta dainjin bututu, transistor gabaɗaya sun fi ƙanƙanta kuma suna buƙatar ƙarancin ƙarfi don aiki.Wasu bututun na'ura suna da fa'ida akan transistor a mitoci masu tsayin aiki ko babban ƙarfin aiki.Yawancin nau'ikan transistor ana yin su zuwa daidaitattun ƙayyadaddun bayanai ta masana'antun da yawa.
